規格：
高純碲：99.999% Te-5N-L-1
檢測雜質：Ag, Al, Cd, Cu, Fe, Mg, Ni, Pb, Se, Sn, Si
雜質總含量：≤10ppm
高純碲：99.9999% Te-6N-L-2
檢測雜質：Ag, Al, Cd, Cu, Fe, Mg, Ni, Pb, Se, Zn, Ca
雜質總含量：≤1ppm
高純碲：99.99999% Te-7N-L-3
檢測雜質：Ag, Al, Cd, Cu, Fe, Mg, Ni, Pb, Se, Zn, Ca
雜質總含量：≤0.1ppm
用途：主要用于制備Ⅱ-Ⅵ族化合物半導體、熱點轉換元件、致冷元件、壓電晶體和紅外探測器，太陽能電池材料等。
包裝：滌綸薄膜包裝后雙層復合膜抽真空包裝兩次，{外套復合鋁箔內充氬氣封裝}或者直接玻璃管真空封裝。
Specification:
High purity Te: 99.999% Te-5N-L-1
Testing impurity: Ag, Al, Cd, Cu, Fe, Mg, Ni, Pb, Se, Sn, Si
Total impurity content: ≤10ppm
High purity Te: 99.9999% Te-6N-L-2
Testing impurity: Ag, Al, Cd, Cu, Fe, Mg, Ni, Pb, Se, Zn, Ca
Total impurity content: ≤1ppm
High purity Te: 99.99999% Te-7N-L-3
Testing impurity: Ag, Al, Cd, Cu, Fe, Mg, Ni, Pb, Se, Zn, Ca
Total impurity content: ≤0.1ppm
Application: Use for preparation II-IV elements chemical compound semiconductor, thermo-electricity transfer cell, refrigerating cell, piezoelectric crystal and infrared detector. Used as the material of solar cell etc…
Package: Packed with terylene film, and double poly-film with vacuum encapsulation, do this twice, then packed with aluminum foil with argon encapsulation, or packed with glass tube with vacuum encapsulation directly.
注：產品實際價格以詢價為準！ |
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