CGHV96100F2
100-W, 7.9 – 9.6-GHz, 50-ohm, Input/Output-Matched, GaN HEMT Power Amplifier
Cree’s CGHV96100F2 is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) on silicon-carbide (SiC) substrates. This GaN internally matched (IM) FET offers excellent power added efficiency in comparison to other technologies. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to GaAs transistors. This IM FET is available in a metal/ceramic flanged package for optimal electrical and thermal performance.
CREE現有庫存器件
型號 數量 單價
CGHV96100F2 14 14580
CMPA2735075F 20 7950
CGH35240F 10 13500
CGHV35400F 10 14500
CGH40010F 30 1250
CGHV96050F2 10 8250
CMPA0060025F 10 7550
成都云麓飛騰電子有限公司跨國經營,依托于在美歐的海外特殊渠道,公司主要提供各類軍用器件,高溫器件,停產,斷檔,冷偏,禁運,以及其他器件。在射頻微波/毫米波方面主要經銷Northrop Grumman、Cree、TriQuint、HRL、Hittite、Toshiba公司的功放芯片,備常用型號;在高可靠半導體方面主要經銷AeroFlex、Intersil、ADI、Xilinx公司的軍級及更高等級器件,部分型號備有現貨。歡迎來電咨詢。
丁凱
成都云麓飛騰電子有限公司
Mobile:15208424859
Tel:028-89994519
Fax: 028-87556798
E-mail:dingkai@ylftdz.com
如下是公司常備用型號:
Northrop Grumman: APH631、APH635、ALH504、SDH148、ALP283
CREE: CMPA2735075F、CGHV96100F2、CGH40010F
TriQuint: TGA2501、TGA9092、TGA2514、TGA2594、TGA4505、TGA4522、TGA2575、TGA4915-CP、TGA4046
AeroFlex: UT28F256QLET-45UCCR
Inersil: IS9-705RH-Q、HS1-26C31RH-Q、HS1-26C31RH-Q、HS9-26CLV31RH-Q、HS9-26CLV32RH-Q
ACTEL: A1280A-CQ172B(5962-9215601MYC)
MSK: MSK-5230-2.5H、MSK-5230-3.3H
Xilinx: XQR2V3000-4CG717V |
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