產品參數
標準包裝:5,000
FET 型:MOSFET N-Channel, Metal Oxide
FET特點:Logic Level Gate
漏極至源極電壓(VDSS):30V
電流-連續漏極(編號)@ 25°C:21A
Rds(*大)@ ID,VGS:4 mOhm @ 20A, 10V
VGS(TH)(*大)@ Id :2.2V @ 250µA
柵極電荷(Qg)@ VGS: 45nC @ 10V
輸入電容(Ciss)@ Vds:1540pF @ 15V
功率 - *大: 3.1W
安裝類型: Surface Mount
包/盒:8-SMD
供應商器件封裝:8-DFN-EP (3x3)
包裝材料:Tape & Reel (TR)
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